Different bias voltage for the input buffer transistor.

不同偏置电压的输入缓冲晶体管。

The opticai bistability with an appropriate bias voltage has been observed.

在适当的偏置电压下，观察到了双稳特性。

The strength of perpendicular STT increases with the increasing bias voltage.

随着电压的增大，垂直项作用增强。

The gain of the APD can be controlled by the magnitude of the reverse bias voltage.

APD的增益可以由反向偏置电压的幅度来控制。

How to choose the bias voltage, the width and the period of the gated pulse is very important.

偏置电压的大小、门脉冲宽度和周期的选择对后脉冲的消除起着关键的作用。

The results showed that the clusters were gently stocked one above the other in low bias voltage;

结果表明，在低的偏压情况下，团簇比较松散地堆积在衬底上；

Finally, we study the transport properties of single molecular magnet driven by spin bias voltage.

最后，我们研究了自旋偏压驱动的单分子磁体的量子输运特性。

Right figure: the temperature and bias voltage dependence of the measured helical edge conductance.

右图：实验上测得的边缘态电导随温度和测量偏压的变化。

Effect of bulk bias voltage and oxygen partial pressure on optical spectrum of ITO film is studied.

研究了基体偏压和氧分压强影响ito膜光谱的机理。

The working properties depend on the gate bias voltage and the structure of pectinate Al electrode.

其工作特性依赖于栅极电压和梳状铝电极的结构。

These electron holes transit through the selenium based on the potential of the bias voltage charge.

这些电洞过境硒的基础上的偏置电压充电的潜力。

The influence of treatment time, gas flow rate and bias voltage on the plasticizer leaching was investigated.

研究了处理时间、气体流量和电极偏压对增塑剂渗出量的影响。

However, too-high bias voltage can cause the increase of surface roughness and stress, and decrease the LIDT.

然而，辅助偏压太高会引起粗糙度和应力的上升，以及损伤阈值的下降。

The input bias current flows at the instrument input due to internal instrument circuitry and the internal bias voltage.

仪器内部电路和内部的偏移电压会在仪器的输入端引起输入偏置电流。

The transmission peaks of high_energy electron are moved toward low_energy ranges with the increasing of the bias voltage.

随着偏压的增大，透射峰位置向低能量区域移动。

And, with the enhancement of substrate bias voltage, electron energy increase gradually, electron density decrease sharply.

且随着基片偏压值的增大，电子能量有缓慢的增加，而电子密度则显著下降。

The theory of field-induced oxidation and the impact of bias voltage and pulse time on the nanofabrication were studied by AFM.

用原子力显微镜（AFM）研究了电场诱导氧化理论以及偏置电压和脉冲时间对加工结构尺寸的影响。

For capacitive sensing, driving signal with DC bias voltage and ac voltage is usually necessary for the measurement of capacitance.

对电容式加速度计，为测量其电容的变化，通常需要带直流偏置的交流电压信号来驱动。

The effect of the incident light spectrum and the waveguide electrode's DC bias voltage on the modulation sensitivity is discussed.

讨论了入射光谱分布对调制灵敏度的影响，以及波导电极直流偏置电压对保证调制灵敏度的作用。

Using an alternating high- and low-bias voltage, we have formed hydrogen-free multilayers of hard and soft diamond-like carbon films.

本文采用交替施加高偏压和低偏压的方法，合成出了具有软膜和硬膜结构的无氢类金刚石多层膜。

Based on the driving circuit of IR2110, the circuits for producing negative bias voltage and increasing driving power are introduced.

在IR 2110驱动电路的基础上，介绍了产生负偏压和提高驱动功率的电路，并且针对电路中存在占空比的问题，设计了占空比调节电路。

The newly CUK controller realizes a kind of high efficiency, low cost and very low output voltage ripple negative bias voltage design.

介绍的新型CUK型变换器，旨在实现一种高效、低成本、输出电压纹波极低的负偏压设计方案。

In a cathode-biased amplifier, the bias voltage is developed across a cathode resistor that is bypassed with a big electrolytic capacitor.

在阴极偏置放大器，偏置电压是发达国家之间的阴极电阻是绕过一个大电解电容器。

The results show that the etching rate depends strongly on plasma composition and the RF bias voltage, but rather weakly on the gas flow rate.

结果表明刻蚀气体的组分和射频偏压对刻蚀速率有较大影响，而气体流量影响不大。

The SPD R&D includes five modules: SPD bias voltage, pre-amplification, avalanche signal extraction, temperature control and digital control circuit.

将单光子探测器的研制分为偏置电压、前置放大、雪崩信号提取、温度控制和数字控制电路五个模块。

The effects of the flow rate of oxygen and pulse bias voltage on the structure, deposition rate and the surface morphology of thin film were studied.

研究了氧流量和脉冲偏压对薄膜相结构、沉积速率、表面形貌、薄膜硬度的影响。

Although it is possible to close multiple paths, this is practical only in DC testing, for example, to apply continuous bias voltage to a number of DUTs.

尽管可能会闭合多条路径，但实际应用中，只有在DC测试中才会用到，例如对多个DUT施加连续的偏置电压。

The gain stabilities and temperature effects were experimentally for three different bias voltage supply modes to photomultipliers at high counting rates.

实验比较了高计数率下三种光电倍增管电压供给方式的增益变化和温度效应。